2SD1407A-Y(F)
Bipolar (BJT) Transistor NPN 100V 5A 12MHz 30W Through Hole TO-220NIS
Key specifications
- Part Number
- 2SD1407A-Y(F)
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Single
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Tube
- Packaging
- Tube
- Power - Max
- 30W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 12MHz
- Supplier Device Package
- TO-220NIS
- Vce Saturation (Max) @ Ib, Ic
- 2V @ 400mA, 4A
- Current - Collector (Ic) (Max)
- 5A
- Current - Collector Cutoff (Max)
- 100A (ICBO)
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1A, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 100V
Product support
- What is the MOQ for 2SD1407A-Y(F)?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.