GT60N321(Q)
IGBT 1000V 60A 170W Through Hole TO-3P(LH)
Key specifications
- Part Number
- GT60N321(Q)
- Manufacturer
- Toshiba
- Category
- Transistors - IGBTs - Single
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Tube
- Packaging
- Tube
- Input Type
- Standard
- Power - Max
- 170W
- Mounting Type
- Through Hole
- Package / Case
- TO-3PL
- Base Part Number
- GT60
- Td (on/off) @ 25°C
- 330ns/700ns
- Operating Temperature
- 150°C (TJ)
- Supplier Device Package
- TO-3P(LH)
- Vce(on) (Max) @ Vge, Ic
- 2.8V @ 15V, 60A
- Reverse Recovery Time (trr)
- 2.5s
- Current - Collector (Ic) (Max)
- 60A
- Current - Collector Pulsed (Icm)
- 120A
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max)
- 1000V
Product support
- What is the MOQ for GT60N321(Q)?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.