HN1B01F-GR(TE85L,F
Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 300mW Surface Mount SM6
Key specifications
- Part Number
- HN1B01F-GR(TE85L,F
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Arrays
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Cut Tape (CT)
- Packaging
- Cut Tape (CT)
- Power - Max
- 300mW
- Mounting Type
- Surface Mount
- Package / Case
- SC-74, SOT-457
- Transistor Type
- NPN, PNP
- Operating Temperature
- 125°C (TJ)
- Frequency - Transition
- 120MHz
- Supplier Device Package
- SM6
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 10mA, 100mA
- Current - Collector (Ic) (Max)
- 150mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 6V
- Voltage - Collector Emitter Breakdown (Max)
- 50V
Product support
- What is the MOQ for HN1B01F-GR(TE85L,F?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.