HN3C10FUTE85LF
RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6
Key specifications
- Part Number
- HN3C10FUTE85LF
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - RF
- RoHS
- REACH
- Pricing
- $0.4020 – $0.6400
Product Attributes
- Gain
- 11.5dB
- Package
- Cut Tape (CT)
- Packaging
- Cut Tape (CT)
- Power - Max
- 200mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Transistor Type
- 2 NPN (Dual)
- Frequency - Transition
- 7GHz
- Supplier Device Package
- US6
- Noise Figure (dB Typ @ f)
- 1.1dB @ 1GHz
- Current - Collector (Ic) (Max)
- 80mA
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 20mA, 10V
- Voltage - Collector Emitter Breakdown (Max)
- 12V
Product support
- What is the MOQ for HN3C10FUTE85LF?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.