HN4A56JU(TE85L,F)
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 60MHz 200mW Surface Mount USV
Key specifications
- Part Number
- HN4A56JU(TE85L,F)
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Arrays
- RoHS
- REACH
- Datasheet
- Pricing
- $0.0630
Product Attributes
- Package
- Tape & Reel (TR)
- Packaging
- Tape & Reel (TR)
- Power - Max
- 200mW
- Mounting Type
- Surface Mount
- Package / Case
- 5-TSSOP, SC-70-5, SOT-353
- Transistor Type
- 2 PNP (Dual)
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 60MHz
- Supplier Device Package
- USV
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 10mA, 100mA
- Current - Collector (Ic) (Max)
- 150mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 2mA, 6V
- Voltage - Collector Emitter Breakdown (Max)
- 50V
Product support
- What is the MOQ for HN4A56JU(TE85L,F)?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.