HN4B01JE(TE85L,F)
Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 150mA 80MHz 100mW Surface Mount ESV
Key specifications
- Part Number
- HN4B01JE(TE85L,F)
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Arrays
- RoHS
- REACH
- Datasheet
- Pricing
- $0.0850 – $0.4600
Product Attributes
- Package
- Cut Tape (CT)
- Packaging
- Cut Tape (CT)
- Power - Max
- 100mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-553
- Transistor Type
- NPN, PNP (Emitter Coupled)
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 80MHz
- Supplier Device Package
- ESV
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA
- Current - Collector (Ic) (Max)
- 150mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 10MA, 100MA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
Product support
- What is the MOQ for HN4B01JE(TE85L,F)?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.