CXDA Electronics
Toshiba

MT3S111P(TE12L,F)

RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI

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Key specifications

Part Number
MT3S111P(TE12L,F)
Manufacturer
Toshiba
Category
Transistors - Bipolar (BJT) - RF
Lead Time
12 Weeks
RoHS
REACH
Pricing
$0.5090 – $0.9400

Product Attributes

Gain
10.5dB
Package
Cut Tape (CT)
Packaging
Cut Tape (CT)
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Type
NPN
Operating Temperature
150°C (TJ)
Frequency - Transition
8GHz
Supplier Device Package
PW-MINI
Noise Figure (dB Typ @ f)
1.25dB @ 1GHz
Current - Collector (Ic) (Max)
100mA
Moisture Sensitivity Level (MSL)
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)
6V

Product support

What is the MOQ for MT3S111P(TE12L,F)?
Minimum order quantity is 1 units.
How do I get pricing?
Submit an RFQ or contact our sales team for volume pricing and lead times.
Is this part RoHS compliant?
Yes, this part is RoHS compliant.

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