MT3S111P(TE12L,F)
RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI

Key specifications
- Part Number
- MT3S111P(TE12L,F)
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - RF
- Lead Time
- 12 Weeks
- Datasheet
- Pricing
- $0.5090 – $0.9400
Product Attributes
- Gain
- 10.5dB
- Package
- Cut Tape (CT)
- Packaging
- Cut Tape (CT)
- Power - Max
- 1W
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 8GHz
- Supplier Device Package
- PW-MINI
- Noise Figure (dB Typ @ f)
- 1.25dB @ 1GHz
- Current - Collector (Ic) (Max)
- 100mA
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 30mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 6V
Product support
- What is the MOQ for MT3S111P(TE12L,F)?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.
