RN1906,LF
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
Key specifications
- Part Number
- RN1906,LF
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Tape & Reel (TR)
- Packaging
- Tape & Reel (TR)
- Power - Max
- 200mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Resistor - Base (R1)
- 4.7 kOhms
- Frequency - Transition
- 250MHz
- Supplier Device Package
- US6
- Resistor - Emitter Base (R2)
- 47 kOhms
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250A, 5mA
- Current - Collector (Ic) (Max)
- 100mA
- Current - Collector Cutoff (Max)
- 500nA
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 50V
Product support
- What is the MOQ for RN1906,LF?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.