RN2105MFV,L3F
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Key specifications
- Part Number
- RN2105MFV,L3F
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Power - Max
- 150mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-723
- Transistor Type
- PNP - Pre-Biased
- Resistor - Base (R1)
- 2.2 kOhms
- Supplier Device Package
- VESM
- Resistor - Emitter Base (R2)
- 47 kOhms
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500A, 5mA
- Current - Collector (Ic) (Max)
- 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 50V
Product support
- What is the MOQ for RN2105MFV,L3F?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.