RN4607(TE85L,F)
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6

Key specifications
- Part Number
- RN4607(TE85L,F)
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Cut Tape (CT)
- Packaging
- Cut Tape (CT)
- Power - Max
- 300mW
- Mounting Type
- Surface Mount
- Package / Case
- SC-74, SOT-457
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Resistor - Base (R1)
- 10 kOhms
- Frequency - Transition
- 200MHz
- Supplier Device Package
- SM6
- Resistor - Emitter Base (R2)
- 47 kOhms
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250A, 5mA
- Current - Collector (Ic) (Max)
- 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 50V
Product support
- What is the MOQ for RN4607(TE85L,F)?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.
