TK11A60D(STA4,Q,M)
N-Channel 600V 11A (Ta) 45W (Tc) Through Hole TO-220SIS
Key specifications
- Part Number
- TK11A60D(STA4,Q,M)
- Manufacturer
- Toshiba
- Category
- Transistors - FETs, MOSFETs - Single
- RoHS
- REACH
- Datasheet
- Pricing
- $2.4780
Product Attributes
- Series
- π-MOSVII
- Package
- Tube
- FET Type
- N-Channel
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 650 mOhm @ 5.5A, 10V
- Power Dissipation (Max)
- 45W (Tc)
- Supplier Device Package
- TO-220SIS
- Gate Charge (Qg) (Max) @ Vgs
- 28nC @ 10V
- Drain to Source Voltage (Vdss)
- 600V
- Input Capacitance (Ciss) (Max) @ Vds
- 1550pF @ 25V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
Product support
- What is the MOQ for TK11A60D(STA4,Q,M)?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.