ULN2004APG,C,N
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA 1.47W 16-DIP
Key specifications
- Part Number
- ULN2004APG,C,N
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Arrays
- RoHS
- REACH
- Pricing
- Contact for pricing
Product Attributes
- Package
- Tube
- Packaging
- Tube
- Package / Case
- 16-DIP (0.300", 7.62mm)
- Transistor Type
- 7 NPN Darlington
- Base Part Number
- ULN200*A
- Operating Temperature
- -40°C ~ 85°C (TA)
- Vce Saturation (Max) @ Ib, Ic
- 1.6V @ 500A, 350mA
- Current - Collector (Ic) (Max)
- 500mA
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 350mA, 2V
- Voltage - Collector Emitter Breakdown (Max)
- 50V
Product support
- What is the MOQ for ULN2004APG,C,N?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.