TP65H050WS
N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3
Key specifications
- Part Number
- TP65H050WS
- Manufacturer
- Transphorm
- Category
- Transistors - FETs, MOSFETs - Single
- Lead Time
- 15 Weeks
- RoHS
- REACH
- Datasheet
- Pricing
- $12.2900 – $15.2800
Product Attributes
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- GaNFET (Gallium Nitride)
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4.8V @ 700A
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60 mOhm @ 22A, 10V
- Power Dissipation (Max)
- 119W (Tc)
- Supplier Device Package
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs
- 24nC @ 10V
- Drain to Source Voltage (Vdss)
- 650V
- Moisture Sensitivity Level (MSL)
- 3 (168 Hours)
- Input Capacitance (Ciss) (Max) @ Vds
- 1000pF @ 400V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 34A (Tc)
Product support
- What is the MOQ for TP65H050WS?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.