TPD3215M
Mosfet Array 2 N-Channel (Half Bridge) 600V 70A (Tc) 470W Through Hole Module
Key specifications
- Part Number
- TPD3215M
- Manufacturer
- Transphorm
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHS
- REACH
- Datasheet
- Pricing
- $179.2010 – $205.6500
Product Attributes
- Package
- Bulk
- FET Type
- 2 N-Channel (Half Bridge)
- Packaging
- Bulk
- FET Feature
- GaNFET (Gallium Nitride)
- Power - Max
- 470W
- Mounting Type
- Through Hole
- Package / Case
- Module
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 34 mOhm @ 30A, 8V
- Supplier Device Package
- Module
- Gate Charge (Qg) (Max) @ Vgs
- 28nC @ 8V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds
- 2260pF @ 100V
- Current - Continuous Drain (Id) @ 25°C
- 70A (Tc)
Product support
- What is the MOQ for TPD3215M?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.