IRFB9N65A
N-Channel 650V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB
Key specifications
- Part Number
- IRFB9N65A
- Manufacturer
- Vishay Precision Group
- Category
- Transistors - FETs, MOSFETs - Single
- RoHS
- REACH
- Datasheet
- Pricing
- $1.5600 – $1.9400
Product Attributes
- Package
- Tube
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 250A
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 930 mOhm @ 5.1A, 10V
- Power Dissipation (Max)
- 167W (Tc)
- Supplier Device Package
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs
- 48nC @ 10V
- Drain to Source Voltage (Vdss)
- 650V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds
- 1417pF @ 25V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 8.5A (Tc)
Product support
- What is the MOQ for IRFB9N65A?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.