IRFD120
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet HVMDIP-4
Key specifications
- Part Number
- IRFD120
- Manufacturer
- Vishay Precision Group
- Category
- Transistors - FETs, MOSFETs - Single
- RoHS
- REACH
- Datasheet
- Pricing
- $0.6600 – $0.8200
Product Attributes
- Package
- Tube
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Package / Case
- 4-DIP (0.300", 7.62mm)
- Vgs(th) (Max) @ Id
- 4V @ 250A
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 270 mOhm @ 780mA, 10V
- Power Dissipation (Max)
- 1.3W (Ta)
- Supplier Device Package
- 4-DIP, Hexdip, HVMDIP
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds
- 360pF @ 25V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 1.3A (Ta)
Product support
- What is the MOQ for IRFD120?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.