SI3585DV-T1-E3
Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP
Key specifications
- Part Number
- SI3585DV-T1-E3
- Manufacturer
- Vishay / Siliconix
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHS
- REACH
- Datasheet
- Pricing
- $0.2300 – $0.2900
Product Attributes
- Series
- TrenchFET
- Package
- Cut Tape (CT)
- FET Type
- N and P-Channel
- Packaging
- Cut Tape (CT)
- FET Feature
- Logic Level Gate
- Power - Max
- 830mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Base Part Number
- SI3585
- Vgs(th) (Max) @ Id
- 600mV @ 250A (Min)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 125 mOhm @ 2.4A, 4.5V
- Supplier Device Package
- 6-TSOP
- Gate Charge (Qg) (Max) @ Vgs
- 3.2nC @ 4.5V
- Drain to Source Voltage (Vdss)
- 20V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C
- 2A, 1.5A
Product support
- What is the MOQ for SI3585DV-T1-E3?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.