TB100EP
Bipolar (BJT) Transistor NPN 700V 1A 2W Through Hole TO-92-3
Key specifications
- Part Number
- TB100EP
- Manufacturer
- WeEn Semicondutors
- Category
- Transistors - Bipolar (BJT) - Single
- RoHS
- REACH
- Datasheet
- Pricing
- $0.0890
Product Attributes
- Package
- Tape & Box (TB)
- Packaging
- Tape & Box (TB)
- Power - Max
- 2W
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Type
- NPN
- Operating Temperature
- 150°C
- Supplier Device Package
- TO-92-3
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 150mA, 750mA
- Current - Collector (Ic) (Max)
- 1A
- Current - Collector Cutoff (Max)
- 100A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 14 @ 100mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 700V
Product support
- What is the MOQ for TB100EP?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.